Edge, Angle Facet Optical Polishing for Optoelectronics

Properties of Typical Aluminum Nitride Substrates

Aluminum Nitride is becoming the material of choice for thin film, thick film and DBC applications due to its high thermal conductivity, non-toxicity, low dielectric loss and reasonable price.

Trace Element Concentration - Typical

Element Concentration
Fe 12 ppm
Cu 27 ppm
Ni 0 ppm
Zn 9 ppm
Cr 3 ppm
Na 22 ppm
K 12 ppm
Y 2.0 (wt%)
Mg 5 ppm
Ca 43 ppm
Ti 7 ppm
V 43 ppm
Zr 24 ppm
Si 152 ppm

Properties - Typical

Chemical Formula AlN (99% Theoretical Density)
Toxicity Nontoxic
Density 3.3 g/cm³
Color Tan/Gray
Crystal Structure Hexagonal
Water Absorption None
pH 6.3
Hardness (knoop) 11.8 GPa
Moh's Hardness 7 at 20°C
Melting Point >2200°C
Flexure Strength 290 MPa
Modulus of Elasticity 331 GPa
Poisson's Ratio 0.22
Thermal Conductivity 175 W/mK
Coefficient of Expansion 4.6 x 10E-6 (20 - 400°C)
Maximum Use Temperature 800°C Oxidizing
Thermal Shock-Quenching 210 - 400 ? T°C (INCONSISTENT INFO.)
Dielectric Constant 0°C 8.9 at 1MHz
Dielectric Loss 20°C 0.0001 - 0.001 at 1MHz
Resistivity >10E+14 ohm-cm
Dielectric Strength 20 KV mm
Bandgap 6.2e ohm-cm

This information does not constitute a warranty for which we shall assume legal responsibility.

Aluminum Nitride substrate related Web sites.

How Aluminum Nitride substrates are manufactured.




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